Changxin Memory Technologies, previously known as Innotron Memory, and previously to that known as either Hefei Chang Xin or Heifei Rui-li IC Manufacturing, is said to be targeting 10k wpm DRAM production by the end of the year. Changxin will compete against chips giants Micron Technology and Samsung Electronics in a $1 billion per year market.
The Chinese company is taking steps to minimize its use of US technology thereby propels them to redesign its dynamic random access memory (DRAM) chips. The company is taking measures to avoid infringing patents and potentially falling victim to the U.S. pressures on China’s rising tech industry.
While Changxin is determined in reducing their reliance on US technology, much of its production still reply on U.S. equipment and tool suppliers. By redesign its DRAM chips, the company is hoping that they will be safe against potential U.S. allegations of intellectual property theft.
While the output will still be small compared with the 1.3 million DRAM wafers a month currently produced globally, the start of production would still mark a major breakthrough for China as the country currently has no homemade DRAM chips, said Sean Yang, an analyst at market research company CINNO.
However, much like the world’s leading semiconductor manufacturers, Changxin still needs to use U.S. equipment from companies like Applied Materials, Lam Research, KLA-Tencor, materials from Dow Chemical and electronic design automation tool providers from Cadence and Synopsys. For more news, stay around on Gizmochina.com.